Patent #20260219800A1
VOLTAGE ADJUSTMENT BASED ON MEMORY DEVICE TEMPERATURE PROFILING
G06F1/00 • Data Storage Systems & Solid-State Drives
G06F1/04 • Microprocessors & Storage Controllers
AI Generated
This patent describes a data storage system designed to enhance memory device reliability and performance. It achieves this by intelligently adjusting internal operating voltages – such as pass-through, bit line bias, or source line voltages – based on a determined "cross-temperature condition." This condition is established through real-time temperature profiling, specifically by measuring both the program (write) and read temperatures associated with virtual memory blocks. This dynamic voltage adaptation optimizes memory operation and mitigates temperature-related operational challenges, thereby improving data integrity and device longevity.
Inventors & Locations
Hichem Belhadj Mohamed
(Loomis, CA US)
•
Nian Niles Yang
(Mountain View, CA US)
•
Pitamber Shukla
(San Jose, CA US)
•
Salvatrice Scommegna
(Cornate D’ Adda, IT)
Filed: 2025-05-30
Issued: 2025-05-30