AI Patent Summary

Patent Document
#US6166960A
United States Patent 115
Abstract
An electronic system, comprising a digital processor and an EEPROM, has circuit logic and program software or firm- ware for determining if a programming voltage level is sufficient for reliably programming the EEPROM. A charge pump is enabled and generates a voltage used for program- ming of the EEPROM. The enabled charge pump thereby loads a battery power supply. In addition, a test load may be connected to the output of the charge pump to simulate the EEPROM load during a programming operation to the EEPROM. The charge pump output voltage is measured to determine if at least a desired voltage value is obtained. Once the charge pump voltage level has been pre-qualified for the desired voltage value, an actual programming opera- tion to the EEPROM may be performed. If the voltage level does not reach the desired value then a programming opera- tion is inhibited and the electronic system may alarm or shut down operation. The charge pump voltage level is a good indication and measure of battery charge condition under actual EEPROM programming load conditions.
AI Analysis & Synthesis
Synthesizing AI Summary...
Patent Classification & AI Product Mapping
Authoritative patent classification definitions mapped to real-world technology domains and commercial product categories.
CPC G11C16/00
Confidence: High
Official Definition
Erasable programmable read-only memories
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Non-Volatile Memory Architecture
Product Category:
EEPROM & Flash Memory Integrated Circuits
Plain-English Summary:
General systems and technologies related to non-volatile memory chips that can be erased and reprogrammed.
Relation to Claims:
The patent relates to an electronic system containing an EEPROM and manages its programming operations, aligning with the general scope of erasable programmable read-only memories.
CPC G11C16/02
Confidence: High
Official Definition
Erasable programmable read-only memories electrically programmable
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Electrically Erasable Programmable Memory
Product Category:
EEPROM Memory Chips
Plain-English Summary:
Memory devices that are electrically programmed and erased, specifically excluding UV-erasable types.
Relation to Claims:
The patent specifically focuses on programming an EEPROM using an electrical programming voltage generated by a charge pump.
CPC G11C16/06
Confidence: High
Official Definition
Auxiliary circuits, e.g. for writing into memory
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Memory Peripheral Circuitry
Product Category:
Charge Pumps & Voltage Regulators for Memory
Plain-English Summary:
Support circuitry used inside memory chips to assist with operations like reading, writing, or voltage generation.
Relation to Claims:
The abstract explicitly details auxiliary components such as a charge pump, test loads, and voltage measurement logic used to support the writing process into the EEPROM.
CPC G11C16/22
Confidence: High
Official Definition
Safety or protection circuits preventing unauthorised or accidental access to memory cells
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Memory Safety & Protection Systems
Product Category:
Secure Memory Modules & Power-Fail Protection
Plain-English Summary:
Circuitry designed to protect memory data or hardware from damage or unauthorized modification due to abnormal conditions.
Relation to Claims:
The patent describes safety mechanisms that inhibit programming operations and trigger alarms or shut down if voltage levels are insufficient, protecting against accidental corruption.
CPC G11C16/225
Confidence: High
Official Definition
Preventing erasure, programming or reading when power supply voltages are outside the required ranges
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Under-voltage Lockout & Power Monitoring
Product Category:
Battery-Powered Memory Management Systems
Plain-English Summary:
Protection mechanisms that block memory write or erase cycles when the supply voltage drops below safe or required levels.
Relation to Claims:
The patent focuses heavily on determining if a programming voltage is sufficient, using a charge pump loaded by a battery, and inhibiting programming if the desired voltage value is not reached.