AI Patent Summary

Patent Document
#US5956589A
United States Patent 115
Abstract
A method is disclosed for forming narrow thermal silicon dioxide side isolation regions in a semiconductor substrate
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Patent Classification & AI Product Mapping
Authoritative patent classification definitions mapped to real-world technology domains and commercial product categories.
CPC H10W10/00
Confidence: High
Official Definition
Isolation regions in semiconductor bodies between components of integrated devices
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
AI Technology & Product Mapping
Technology Domain:
Semiconductor Device Fabrication
Product Category:
Integrated Circuits & Microprocessors
Plain-English Summary:
Barriers or separation spaces created inside semiconductor materials to electrically and thermally isolate different electronic components on a microchip from each other.
Relation to Claims:
Directly maps to the patent's focus on forming narrow thermal silicon dioxide side isolation regions within a semiconductor substrate to separate device components.
CPC H10W10/01
Confidence: High
Official Definition
Manufacture or treatment
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
AI Technology & Product Mapping
Technology Domain:
Semiconductor Manufacturing Processes
Product Category:
Semiconductor Fabrication Equipment & Materials
Plain-English Summary:
The specific manufacturing processes, fabrication steps, or chemical/physical treatments used to build semiconductor components.
Relation to Claims:
Aligns with the procedural aspect of the invention, which outlines a method for forming specific isolation regions.
CPC H10W10/011
Confidence: High
Official Definition
Manufacture or treatment of isolation regions comprising dielectric materials
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
AI Technology & Product Mapping
Technology Domain:
Semiconductor Dielectric Deposition & Etching
Product Category:
Semiconductor Components
Plain-English Summary:
The fabrication processes used to create electrical insulation barriers made of non-conducting dielectric materials (like silicon dioxide) within semiconductor chips.
Relation to Claims:
Refers specifically to the use of thermal silicon dioxide as the dielectric material for the isolation regions mentioned in the patent title and abstract.
CPC H10W10/012
Confidence: High
Official Definition
Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
AI Technology & Product Mapping
Technology Domain:
Silicon Oxidation & Thermal Processing
Product Category:
Silicon Wafers & Processing Technology
Plain-English Summary:
The method of selectively growing silicon dioxide (thermal oxide) in defined areas of a silicon wafer to act as an isolating barrier between transistors or other active devices.
Relation to Claims:
Directly correlates with the patent's explicit mention of forming 'thermal silicon dioxide side isolation regions', which is fundamentally tied to thermal oxidation techniques like LOCOS.
CPC H10D84/00
Confidence: High
Official Definition
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
ELECTRICITY > SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR > INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
AI Technology & Product Mapping
Technology Domain:
Semiconductor Substrate Engineering
Product Category:
Discrete Semiconductors & Integrated Circuits
Plain-English Summary:
Electronic micro-devices built directly onto standard semiconductor base materials or substrates consisting purely of semiconducting layers.
Relation to Claims:
Provides the foundational substrate context ('in a semiconductor substrate') referenced in the patent abstract.