AI Patent Summary

Patent Document
#US5604701A
United States Patent 119)
Abstract
A sequential memory device having a read pipeline data structure for reading data from a bitline of a memory array of the device is disclosed. The read pipeline data structure includes at least one data path including a sense amp for sensing the logic level appearing on the bitline, a flip-flop for providing an output signal indicative of the data bits received on the bitline, and means for initializing the data path upon power up of the device such that the first data bit from the memory array is available for output from the device without the need and before the occurrence of a clock signal.
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Patent Classification & AI Product Mapping
Authoritative patent classification definitions mapped to real-world technology domains and commercial product categories.
CPC G11C7/00
Confidence: High
Official Definition
Arrangements for writing information into, or reading information out from, a digital store
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Memory Architecture & Core Circuitry
Product Category:
Semiconductor Memory Chips
Plain-English Summary:
General circuitry and structural arrangements used for storing digital data into memory arrays and retrieving it back out.
Relation to Claims:
The patent discloses a sequential memory device utilizing a read pipeline data structure to read data from a bitline of a memory array, directly aligning with general digital store read/write arrangements.
CPC G11C7/10
Confidence: High
Official Definition
Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Memory I/O Interfaces & Buffers
Product Category:
Memory Controllers & Interface ICs
Plain-English Summary:
Circuits and interfaces that manage how data flows in and out of a memory device, including control logic and buffering.
Relation to Claims:
The invention involves managing data paths and output signals from memory bitlines, representing input/output data interface handling.
CPC G11C7/1051
Confidence: High
Official Definition
Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Sense Amplifiers & Output Drivers
Product Category:
Memory Read-Out Circuitry
Plain-English Summary:
Circuits responsible for driving, amplifying, and registering data as it is being read out of a memory device.
Relation to Claims:
The abstract explicitly details a read pipeline having a sense amp for sensing bitline logic levels and outputting data bits, directly corresponding to data output circuits.
CPC G11C7/106
Confidence: High
Official Definition
Data output latches
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Data Latches & Sequential Logic
Product Category:
Memory Pipeline Registers
Plain-English Summary:
Storage elements like latches or flip-flops used to hold output data steady while it is being read from the memory.
Relation to Claims:
The patent incorporates a flip-flop within the read pipeline data structure to provide an output signal indicative of received data bits, mapping directly to data output latches.
CPC G11C16/00
Confidence: Medium
Official Definition
Erasable programmable read-only memories
PHYSICS > INFORMATION STORAGE > STATIC STORES
AI Technology & Product Mapping
Technology Domain:
Non-Volatile Memory Architecture
Product Category:
Flash Memory & EEPROM Devices
Plain-English Summary:
Non-volatile memory technologies that can be electrically erased and reprogrammed, such as flash memory or EPROM.
Relation to Claims:
Although the abstract specifically mentions power-up initialization and bitline reading typical of sequential memory arrays, this class covers the broader non-volatile and programmable memory category often associated with such power-up read structures.